高纯度石英玻璃40-110 GHz频段电参数的表征.pdf
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1、第 42 卷第 4 期2023 年 8 月红 外 与 毫 米 波 学 报J.Infrared Millim.WavesVol.42,No.4August,2023文章编号:1001-9014(2023)04-0490-07DOI:10.11972/j.issn.1001-9014.2023.04.010Characterization of electrical parameters of high-purity quartz glass in the 40-110 GHz frequency bandZHU Xiang-Bao1,SUN Xu1*,YUE Hai-Kun2,QIAN Ling
2、-Xuan1,NI Lei3(1.University of Electronic Science and Technology of China,Chengdu 611731,China;2.Microsystem&Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China;3.Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Techno
3、logy,Mianyang 621010,China)Abstract:The transmission line structures such as coplanar waveguide(CPW)and microstrip ring resonator(MRR)were designed on a high-purity quartz substrate(99.9997%)with a thickness of 127 m.The average insertion loss for the CPW line varied from 0.096 to 0.176 dB/mm in the
4、 frequency range of 40-110 GHz.Furthermore,the relative permittivity and loss tangent of the quartz were extracted by the MRR method.The relative permittivity of the quartz substrate in the V-band and W-band ranged with 3.7-3.85 and 3.85-4,respectively.The loss tangent value was approximately 0.004
5、in the V-band and 0.004-0.006 in the W-band.The performance comparison with other substrates shows that this high-purity quartz has excellent and stable electrical properties and its potential for designing high-performance passive and packaging structures.Key words:quartz glass,coplanar waveguide,m
6、icrostrip ring resonator,V-band,W-band高纯度石英玻璃40110 GHz频段电参数的表征朱香宝1,孙旭1*,岳海昆2,钱凌轩1,倪磊3(1.电子科技大学,四川 成都 611731;2.中国工程物理研究院 微系统与太赫兹研究中心,四川 成都 610200;3.西南科技大学 制造过程测试技术教育部重点实验室,四川 绵阳 621010)摘要:基于127 m的高纯度石英(99.999 7%)基底设计了共面波导(CPW)、微带环形谐振器(MRR)结构,通过测试得到在40110 GHz的频率范围内,CPW线的平均插入损耗在0.0960.176 dB/mm之间。此外,采用
7、MRR方法提取了石英的相对介电常数和损耗角正切值,该石英基底在V波段和W波段的相对介电常数分别介于3.73.85和3.854之间,损耗角正切值在V波段约为0.004,在W波段介于0.0040.006之间。通过与其他基底性能对比表明,该高纯度石英具有良好稳定的电性能,其在设计高性能无源和封装结构方面具有一定的潜力。关键词:石英玻璃;共面波导;微带环形谐振器;V波段;W波段中图分类号:TN817;TN815 文献标识码:AIntroductionThe development of modern wireless communication technology requires a lot of
8、 bandwidth,so the fifth-generation(5G)mobile network has been widely used in everyday life1.The performance of 5G networks will be further enhanced by using carrier frequencies in the millimeter wave region,which will achieve higher data rates2.However,as more and more high-frequency bands are utili
9、zed,numerous new issues arise due to the rapid increase in dielectric substrate loss.For instance,transmission line loss rises as frequency rises;in a similar vein,the dielectric constant of the substrate fluctuates with increasing frequency,causing a significant departure from the design in terms o
10、f circuit performance.SigReceived date:2022 09 28,revised date:2023 04 17 收稿日期:2022 09 28,修回日期:2023 04 17Biography:ZHU Xiang-bao(1997-),male,Wuhu,China,master.Research area involves Microwave theory and simulation.E-mail:*Corresponding author:E-mail:4 期 ZHU Xiang-Bao et al:Characterization of electr
11、ical parameters of high-purity quartz glass in the 40-110 GHz frequency bandnificant improvements in equipment,packaging techniques,and other areas of the millimeter wave frequency spectrum are necessary to meet these demands3-5.The majority of modern millimeter wave packages are comprised of cerami
12、c,fan-out,etc6-7.Ceramics are chosen for 5G applications due to their low loss and consistent performance in the millimeter wave spectrum;nevertheless,their expense and integration constraints impede their growth8.Fan-out wafer level packaging(FOWLP),which allows for nearly monolithic integration,is
13、 becoming more popular.However,it uses compression molding to form rewiring,which can result in significant die shifts.Furthermore,antennas and other high-performance RF structures must be integrated at the top of the module to dissipate heat from the bottom of the chip through silicon pass holes,re
14、sulting in a mismatch in the coefficient of thermal expansion(CTE)between the silicon module and the PCB,which can cause reliability issues.Because of their superior dimensional stability,quartz-based packages are becoming ideal candidates for millimeter wave technology implementation.The CTE of the
15、 quartz is customizable,which makes it more compatible with the device structure9.For this reason,the basic electrical properties of high-purity quartz(99.9997%)are studied in this paper.The result shows that the quartz has a lower loss tangent and better performance in the high-frequency band,demon
16、strating the advantages of high-purity quartz packaging in the 5G frequency band.1 Design of test structures Coplanar waveguides are frequently used for planar transmission lines,and their insertion loss provides a good indication of a materials aptitude for high-frequency applications.Additionally,
17、a microstrip ring resonator is used to extract the electrical characteristics(dielectric constant and loss tangent)of the quartz substrate in the broadband V-band and W-band.The bottom of the quartz is covered with a 1 m thick gold layer as a metal ground in all structural designs,and a 4 m thick go
18、ld layer is subsequently employed to finish the construction of the quartz front,as illustrated in Fig.1(a).1.1Coplanar waveguide(CPW)linesThe design of CPW is predicated on the quasi-static model of an elliptic integral function subject to conformal transformation10.The relationship between the cha
19、racteristic impedance of CPW,the effective dielectric constant of the substrate and the substrate thickness h,the signal line width W,and the slot spacing g is given by equations(1-4).Z0=60eff1K(k)K(k)+K(kt)K(kt),(1)k=W2g+W,k=1-k2,(2)kt=1-kt2,kt=tanh(W4h)tanh(W+2g)4h),(3)eff=1+rK(k)K(k)K(kt)K(kt)1+K
20、(k)K(k)K(kt)K(kt).(4)In this model,with the increase of h/W,the effective dielectric constant eff decreases with the change of g/W.In this paper,we need to extract the effective permittivity and relative permittivity values of the high-purity quartz substrate,so we need eff to be as stable as possib
21、le when designing the CPW,which is the main direction of concern in our optimization.Furthermore,design optimization should consider the processing processs accuracy,the probes specification used in the W-band of 100 m,and the practical requirements for testing the characteristic impedance design of
22、 50.Based on the above design specifications,the parameters W and g are optimized and simulated,with the simulation results shown in Fig.2.As can be seen from the figure,the combination of g=25 m and W=140 m does not produce resonance and has a lower S21.The dimensions of the designed CPW are provid
23、ed in Table 1.Two different lengths of CPW were modeled and designed to characterize the insertion loss per unit length.The structure schematic is shown in Fig.1(b).1.2Microstrip ring resonator(MRR)The MRR method is a reliable method for high-frequency dielectric material characterization.The inserF
24、ig.1Test structures,(a)material stack up,(b)CPW line,(c)microstrip ring resonator图1测试结构,(a)材料堆叠,(b)共面波导线,(c)微带环形谐振器491红 外 与 毫 米 波 学 报42 卷tion loss of the MRR has a resonant period peak.The dielectric constant is calculated using the location of the resonant period peak in the insertion loss of the M
25、RR.And the loss tangent of the material is determined using the resonant peaks no-load quality factor.The desired resonant frequency and the corresponding ring radius are derived from equation(5).f0=nc2rmeff,(5)where f0 is the nth resonant frequency of a ring of average radius rm,the effective permi
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