基于半导体性单壁碳纳米管_富勒烯异质结的高性能透明全碳光电探测器.pdf
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1、文章编号2097-1842(2023)05-1243-14High-performance transparent all-carbon photodetectors basedon the semiconducting single-walled carbonnanotube/fullerene heterojunctionsZHANGLuo-xi,YINHuan,CHENYue,ZHUMing-kui,SUYan-jie*(Key Laboratory of Film and Microfabrication(Ministry of Education),School of Electro
2、nics,Information andElectrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)*Corresponding author,E-mail:Abstract:Takingadvantageofthehighabsorptioncoefficient,excellentphotoelectricproperties,andhighcarriermobilityofSingle-WalledCarbonNanoTubes(SWCNTs),high-performance,transparen
3、t,all-carbonField-EffectTransistor(FET)photodetectorhasbeenconstructedwithahightransmittancemorethan80%inthevisiblelightband,inwhichsemiconductingSWCNT(sc-SWCNT)/fullerene(C60)heterojunctionsasthechannelmaterials,patternedmetallicSWCNTfilmassource/drainelectrodes,grapheneoxide(GO)asthedielectriclaye
4、r,andIndiumTinOxide(ITO)asatransparentgateelectrode.Theelectricaltestresultsshowthatthephotodetectorexhibitsastronggate-tunablecharacteristics,andachievesabroadbandspectralre-sponsefrom405to1064nminthevisible-nearinfraredspectralregion.Under940nmilluminationwithalightdensityof5mW/cm2,themaximumphoto
5、electricresponsivityof18.55A/Wandaspecificdetectivityof5.351011Jonescanbeachieved.Key words:single-walledcarbonnanotubes;Fullerene;all-carbonheterojunctions;hightransparency;field-effecttransistorphotodetector基于半导体性单壁碳纳米管/富勒烯异质结的高性能透明全碳光电探测器张罗茜,尹欢,陈越,朱明奎,苏言杰*(上海交通大学电子信息与电气工程学院薄膜与微细技术教育部重点实验室,上海 2002
6、40)摘要:利用半导体性单壁碳纳米管(SWCNT)的高吸收系数、优异的光电特性和高载流子迁移率等特点,本文构筑了基于半导体 SWCNT(sc-SWCNT)/富勒烯(C60)异质结的透明全碳宽光谱的场效应晶体管光电探测器。该器件的大部分结构均由碳基材料组成,全碳异质结作为导电沟道材料,金属性 SWCNT 作为源漏电极,氧化石墨烯(GO)作为介质层,在可见光波段的透光率均高于 80%。电学测试结果表明:该光电探测器表现出了较强的栅控能力,实现了从 405收稿日期:2022-11-24;修订日期:2022-12-12基金项目:国家自然科学基金(No.61974089)SupportedbytheNa
7、tionalNaturalScienceFoundationofChina(No.61974089)第16卷第5期中国光学(中英文)Vol.16No.52023 年 9 月ChineseOpticsSept.20231064nm 的可见光-近红外宽光谱响应,在 5mW/cm2的 940nm 激光照射下,该器件光电响应率可以达到 18.55A/W,比探测率达到 5.351011Jones,同时,表现出了优异的循环稳定性。关 键 词:单壁碳纳米管;富勒烯;全碳异质结;高透明度;场效应晶体管光电探测器中图分类号:TN15文献标志码:Adoi:10.37188/CO.2022-02431Introdu
8、ctionDuetotherapiddevelopmentofsemiconduct-ortechnologyandinformationscience,theresearchonphotosensitivedeviceshasreceivedextensiveat-tention.Photosensitivedevicesplayacrucialcoreroleinmodernopticaldetection,opticalcommunic-ation,optical information processing,and opticalcontroltechnologies in indus
9、trial technology,na-tionaldefense,military,andcivilianfields.Asthescale and diversity of applications are increasing,thedemandforlightdetectiondeviceswithhigherspeed,high conversion efficiency or wide wave-lengthrange,flexibility,andtransparencyisbecom-ingmoreprominent.Moreover,thereareincreasingreq
10、uirements for the operational performance ofphotodetectors,suchashighsensitivityandrespons-ivityaswellasfastresponsespeed,lownoiseandlowpowerconsumptionofthedevicesintheoperat-ing wavelength band1.Kobe University2 has de-veloped an infrared sensor with high responsivityat RT,and the central part of
11、the device is anAl0.3Ga0.7As/GaAs heterostructure.The maximumphotoelectricresponsivityof0.8A/Wandaspecif-icdetectivityof1.81010Jonesareachievedatabout6.6matabiasof1V.Althoughconventionalsilic-on-basedphotodetectorshavetheadvantagesofma-turepreparationprocessandlowcost,thewidebandgapofsiliconmaterial
12、s(1.12eV)limitstherangein working wavelength3.In addition,the energyband structure of the indirect band gap of siliconmaterial makes it impossible to achieve high-effi-ciency photoelectric conversion,especially in thefieldoftransparentoptoelectronics.Inthisfield,thelightabsorptioncapacityofmaterials
13、suchassilic-on,germanium,indium gallium arsenic and othermaterialswith high transparency is drastically re-duced,makingitdifficulttoachievetheperfectin-tegrationof high transparency and high optoelec-tronic performance.At present,most photoactivematerialsusedinphotodetectorsareinorganic,andthemanufa
14、cturing process of these materials re-quireshightemperatureandhighenergyconsump-tion,and the growth process needs to use manycomplex methods.These methods are complex,sensitivetoprocessfluctuations,andhavehightech-nical requirements.In addition,the processes andphotoactive materials themselves typic
15、ally containharmfulelementssuchaslead,mercury,cadmiumand arsenic.Therefore,the development of NIRphotodetectorsbasedonnewmaterialshasgradu-allybecomearesearchfocusinrecentyears.Sincethe1960s,theemergingfieldoforganicelectronicshasmadetremendousprogressincatch-ingupwithinorganicsemiconductortechnolog
16、yandnowoffersalternativesformanyoptoelectronicap-plications.Thedevelopmentofinorganicmaterialsiscurrentlydominatedbyinorganicsemiconductorsormetals,suchastransparentelectrodes,thin-filmtransistors,solarcells,andphotodetectors.Amongthem,low-dimensionalnanoscalematerialshaveat-tractedmuch attention fo
17、r their potential applica-tionsinnewprintable,highlyintegratedflexibleandself-powered photochemical UV-NIR broad-spec-trumphotodetectors.Inrecentyears,allotropestructuresofcarbonsuch as fullerenes(C60),carbon nanotubes,andgraphenehaveattractedagreatdealofresearchin-terestandexperimentalapplicationsd
18、uetotheirsu-periorchemical,physical,mechanical,andelectron-icproperties.Dependingonthechemicalproperties,some of these carbon materials are metallic andsome are semiconducting and can form insulatingoxides.Therefore,theuseofthesematerialsincom-bination to fabricate new optoelectronic devices1244中国光学
19、(中英文)第16卷composedentirelyofcarbon-basedmaterialsofferssomeattractivepossibilitiesforthedevelopmentofnext-generation electronic devices.Carbon-basedmaterialsareveryabundantonEarth3-4andcanbedispersedanddepositedusingsolutionprocesses,sothey can be used directly in well-developed toolsandprocesses5,an
20、dtheseadvantageslaythefound-ationforthedevelopmentofcarbonnanomaterialsforresearchandapplications.Duetotheirexcellentelectricalconductivity,hightransparencyandhighrobustness,carbonnanomaterialshavereceivedhighattention,especially Single-Walled Carbon NanoTubes(SWCNTs).As a typical quasi one-dimen-si
21、onalnanomaterial,SWCNTshavespecialelectric-alandopticalproperties6-7andhavebeenextens-ivelyinvestigatedinvariousapplicationfields,suchastransistorsandsolarcells8-9.Accordingtotheirdiametersandchirality,SWCNTsexhibitsemicon-ductingormetalliccharacteristics10.Thebandgapsof semiconducting SWCNTs(sc-SWC
22、NTs)withdifferentdiametersvaryfrom0.5to1.2eV.Duetotheirultra-highcarriermobility(105cm2/Vs),highabsorptioncoefficients(104105/cm),andlongex-citondiffusionlength,sc-SWCNTsarecommonlyusedasactivematerialsforhigh-performancecar-bon-basedphotodetectors11-12.Inaddition,theelec-trontransitionofsc-SWCNTsis
23、sensitivetopolar-izedlightduetotheirspecificangularmomentuminitssubbandgap,thusfurtherexpandingthedetec-tionapplicationsofsc-SWCNTs-basedphotodetect-ors13-14.Duetotheaboveuniqueproperties,sc-SW-CNTshavebecomeanidealmaterialforlighten-ergycollectioninbroadbandlightdetection.Therehavebeennumerousrepor
24、tsonthere-search and applications of various photosensitivedevices based on sc-SWCNTs.Researchers fromPekingUniversity15havedevelopedanasymmetricstructurebased SWCNT photovoltaic type IR de-tectorwitharesponsivityof9.87105A/Wandadetectivityof107Jones.ThistypeofIRdetectorhastheadvantagesofsimpleproce
25、ssandnocoolingIRdetection at RT.L Pengs team16 also reported ahigh-performancephotodiodebasedoncarbonnan-otubestreatedbyadopant-freetechniquesolution,whichcanoperateatRTandzerobias.Thebroad-band response range of the detector is 785 2100 nm,and the detectivity exceeds 1011 Jones.However,thephotogene
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- 基于 半导体 性单壁碳 纳米 富勒烯异质结 性能 透明 光电 探测器
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