xb8886a保护ic-XB8886A中文资料-骊微电子.pdf
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1、XB8886A _ _ _ XySemi Inc - 1 - REV0.3 One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION The XB8886A Series product is a high integration solution for lithium- ion/polymer battery protection. XB8886A contains advanced power MOSFET, high-accuracy voltage detection circuits and del
2、ay circuits. XB8886A is put into an SOP8-PP package and only one external component makes it an ideal solution in limited space of battery pack. XB8886A has all the protection functions required in the battery application including overcharging, overdischarging, overcurrent and load short circuiting
3、 protection etc. The accurate overcharging detection voltage ensures safe and full utilization charging. The low standby current drains little current from the cell while in storage. The device is not only targeted for digital cellular phones, but also for any other Li-Ion and Li-Poly battery-powere
4、d information appliances requiring long- term battery life. FEATURES Protection of Charger Reverse Connection Protection of Battery Cell Reverse Connection Integrate Advanced Power MOSFET with Equivalent of 8.5m RSS(ON) SOP8-PP Package Only One External Capacitor Required Over-temperature Protection
5、 Overcharge Current Protection Two-step Overcurrent Detection: -Overdischarge Current -Load Short Circuiting Charger Detection Function 0V Battery Charging Function -Delay Times are generated inside High-accuracy Voltage Detection Low Current Consumption - Operation Mode:7.8A typ. - Power-down Mode:
6、 4.5A typ. RoHS Compliant and Lead (Pb) Free APPLICATIONS One-Cell Lithium-ion Battery Pack Lithium-Polymer Battery Pack Power Bank Figure 1. Typical Application Circuit XB8886A现货TEL:13808858392 杜S XB8886A _ _ _ XySemi Inc - 2 - REV0.3 ORDERING INFORMATION PART NUMBER Pack age Overcharg e Detection
7、Voltage VCU (V) Overcharge Release Voltage VCL (V) Overdischarge Detection Voltage VDL (V) Overdischarge Release Voltage VDR (V) Overcurrent Detection Current IOV1 (A) Top Mark XB8886A SOP 8-PP 4.30 4.10 2.40 3.0 15 XB8886AYW(note) Note: “YW” is manufacture date code, “Y” means the year, “W” means t
8、he week PIN CONFIGURATION Figure 2. PIN Configuration PIN DESCRIPTION XB8886A PIN NUMBER PIN NAME PIN DESCRIPTION 1,2,3,4 VM The negative terminal of the battery pack. The internal FET switch connects this terminal to GND 5,7,8 GND Ground, connect the negative terminal of the battery to this pin 6 V
9、DD Power Supply 9 EPAD Exposed pad,Must connect with GND of XB8886A by mass metal ABSOLUTE MAXIMUM RATINGS (Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability.) PARAMETER VALUE UNIT VDD input
10、 pin voltage -0.3 to 6 V VM input pin voltage -6 to 10 V Operating Ambient Temperature -40 to 85 C XB8886A _ _ _ XySemi Inc - 3 - REV0.3 Maximum Junction Temperature 125 C Storage Temperature -55 to 150 C Lead Temperature ( Soldering, 10 sec) 300 C Power Dissipation at T=25 C 0.625 W Package Thermal
11、 Resistance (Junction to Ambient) JA 250 C/W Package Thermal Resistance (Junction to Case) JC130 C/W ESD 2000 V ELECTRICAL CHARACTERISTICS Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Detection Voltage O
12、vercharge Detection Voltage VCU 4.25 4.30 4.35 V Overcharge Release Voltage VCL 4.05 4.10 4.15 V Overdischarge Detection Voltage VDL 2.3 2.4 2.5 V Overdischarge Release Voltage VDR 2.9 3.0 3.1 V Detection Current Overdischarge Current1 Detection *IIOV1 VDD=3.6V 15 A Overdischarge Current1 Recovery *
13、IROV1 VDD=3.6V 50 uA Overcharge Current Detection *ICHOC VDD=3.6V 18 A Load Short-Circuiting Detection ISHORT VDD=3.6V 60 A Current Consumption Current Consumption in Normal Operation IOPE VDD=3.6V VM =0V 7.8 13 A Current Consumption in power Down IPDN VDD=2.0V VM pin floating 4.5 7 A VM Internal Re
14、sistance Internal Resistance between VM and VDD *RVMD VDD=2.0V VM pin floating 150 k Internal Resistance between VM and GND *RVMS VDD=3.6V VM=1.0V 12 k FET on Resistance 30 Equivalent FET on Resistance *RSS(ON) VDD=3.6V IVM =1.0A 8.5 m XB8886A _ _ _ XySemi Inc - 4 - REV0.3 Over Temperature Protectio
15、n 120 Over Temperature Protection *TSHD+ 120 oC Over Temperature Recovery Degree *TSHD- 100 Detection Delay Time 0.25 Overcharge Voltage Detection Delay Time tCU 130 180 mS Overdischarge Voltage Detection Delay Time tDL 40 60 mS Overdischarge Current Detection Delay Time *tIOV VDD=3.6V 6 10 mS Overc
16、harge Current Detection Delay Time *tCHOC VDD =3.6V 12 20 mS Load Short-Circuiting Detection Delay Time *tSHOR T VDD=3.6V 140 240 uS Note: *:-The parameter is guaranteed by design. Figure 3. Functional Block Diagram FUNCTIONAL DESCRIPTION The XB8886A monitors the voltage and current of a battery and
17、 protects it from being damaged due to overcharge voltage, overdischarge voltage, overdischarge current, and short circuit conditions by disconnecting the battery from the load or charger. These functions are required in order to operate the battery cell within specified limits. The device requires
18、only one external capacitor. The MOSFET is integrated and its RSS(ON) is as low as 8.5m typical. XB8886A _ _ _ XySemi Inc - 5 - REV0.3 Normal operating mode If no exception condition is detected, charging and discharging can be carried out freely. This condition is called the normal operating mode.
19、Overcharge Condition When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under normal condition and the state continues for the overcharge detection delay time (tCU) or longer, the XB8886A turns the charging control FET off to stop charging. This condi
20、tion is called the overcharge condition. The overcharge condition is released in the following two cases: 1, When the battery voltage drops below the overcharge release voltage (VCL), the XB8886A turns the charging control FET on and returns to the normal condition. 2, When a load is connected and d
21、ischarging starts, the XB8886A turns the charging control FET on and returns to the normal condition. The release mechanism is as follows: the discharging current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pi
22、n voltage increases about 0.7 V (forward voltage of the diode) from the GND pin voltage momentarily. The XB8886A detects this voltage and releases the overcharge condition. Consequently, in the case that the battery voltage is equal to or lower than the overcharge detection voltage (VCU), the XB8886
23、A returns to the normal condition immediately, but in the case the battery voltage is higher than the overcharge detection voltage (VCU),the chip does not return to the normal condition until the battery voltage drops below the overcharge detection voltage (VCU) even if the load is connected. In add
24、ition, if the VM pin voltage is equal to or lower than the overcurrent detection voltage when a load is connected and discharging starts, the chip does not return to the normal condition. Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery
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