XB7608AJ 5V2.1-2.4A输出10-12W锂电保护IC-骊微电子.pdf
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1、XB7608AJ _ _ _ XySemi Inc - 1 - REV0.1 One Cell Lithium-ion/Polymer Battery Protection IC GENERAL DESCRIPTION The XB7608AJ series product is a high integration solution for lithium- ion/polymer battery protection. XB7608AJ contains advanced power MOSFET, high-accuracy voltage detection circuits and
2、delay circuits. XB7608AJ is put into an ultra-small CPC5 package and only one external component makes it an ideal solution in limited space of battery pack. XB7608AJ has all the protection functions required in the battery application including overcharging, overdischarging, overcurrent and load sh
3、ort circuiting protection etc. The accurate overcharging detection voltage ensures safe and full utilization charging. The low standby current drains little current from the cell while in storage. The device is not only targeted for digital cellular phones, but also for any other Li-Ion and Li-Poly
4、battery-powered information appliances requiring long- term battery life. FEATURES Protection of Charger Reverse Connection Protection of Battery Cell Reverse Connection Integrate Advanced Power MOSFET with Equivalent of 15.5m RSS(ON) Ultra-small CPC5 Package Only One External Capacitor Required Ove
5、r-temperature Protection Overcharge Current Protection Two-step Overcurrent Detection: -Overdischarge Current -Load Short Circuiting Charger Detection Function 0V Battery Charging Function -Delay Times are generated inside High-accuracy Voltage Detection Low Current Consumption - Operation Mode: 3.5
6、A typ. - Power-down Mode: 1.6A typ. RoHS Compliant and Lead (Pb) Free APPLICATIONS One-Cell Lithium-ion Battery Pack Lithium-Polymer Battery Pack Figure 1. Typical Application Circuit 深圳市骊微电子科技有限公司现货 深圳市骊微电子科技有限公司现货 TEL:13808858392 杜杜S XB7608AJ _ _ _ XySemi Inc - 2 - REV0.1 ORDERING INFORMATION PART
7、 NUMBER Packa ge Overcharg e Detection Voltage VCU (V) Overcharge Release Voltage VCL (V) Overdischarge Detection Voltage VDL (V) Overdischarge Release Voltage VDR (V) Overcurrent Detection Current IOV1 (A) Top Mark XB7608AJ CPC5 4.30 4.10 2.40 3.0 9 XB7608AJYW(note) Note: “YW” is manufacture date c
8、ode, “Y” means the year, “W” means the week PIN CONFIGURATION Figure 2. PIN Configuration(TOP View) PIN DESCRIPTION PIN NUMBER PIN NAME PIN DESCRIPTION 1 VDD Power Supply 2,3 GND Ground, connect the negative terminal of the battery to this pin 4,5 VM The negative terminal of the battery pack. The in
9、ternal FET switch connects this terminal to GND Please Connect these pins with mass metal. XB7608AJ _ _ _ XySemi Inc - 3 - REV0.1 ABSOLUTE MAXIMUM RATINGS (Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect dev
10、ice reliability.) PARAMETER VALUE UNIT VDD input pin voltage -0.3 to 6 V VM input pin voltage -6 to 10 V Operating Ambient Temperature -40 to 85 C Maximum Junction Temperature 125 C Storage Temperature -55 to 150 C Lead Temperature ( Soldering, 10 sec) 300 C Power Dissipation at T=25 C 0.3 W Package
11、 Thermal Resistance (Junction to Ambient) JA 150 C/W Package Thermal Resistance (Junction to Case) JC100 C/W ESD 2000 V ELECTRICAL CHARACTERISTICS Typicals and limits appearing in normal type apply for TA = 25oC, unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Detection V
12、oltage Overcharge Detection Voltage VCU 4.25 4.30 4.35 V Overcharge Release Voltage VCL 4.05 4.10 4.15 V Overdischarge Detection Voltage VDL 2.3 2.4 2.5 V Overdischarge Release Voltage VDR 2.9 3.0 3.1 V Detection Current Overdischarge Current1 Detection *IIOV1 VDD=3.6V 9 A Load Short-Circuiting Dete
13、ction *ISHORT VDD=3.6V 45 A Current Consumption Current Consumption in Normal Operation IOPE VDD=3.6V VM =0V 3.5 6 A Current Consumption in power Down IPDN VDD=2.0V VM pin floating 1.6 4 A XB7608AJ _ _ _ XySemi Inc - 4 - REV0.1 VM Internal Resistance Internal Resistance between VM and VDD *RVMD VDD=
14、2.0V VM pin floating 300 k Internal Resistance between VM and GND *RVMS VDD=3.6V VM=1.0V 25 k FET on Resistance 30 Equivalent FET on Resistance *RSS(ON) VDD=3.6V IVM =1.0A 15.5 m Over Temperature Protection 120 Over Temperature Protection *TSHD+ 150 oC Over Temperature Recovery Degree *TSHD- 110 Det
15、ection Delay Time 0.25 Overcharge Voltage Detection Delay Time tCU 130 200 mS Overdischarge Voltage Detection Delay Time tDL 40 60 mS Overdischarge Current Detection Delay Time *tIOV VDD=3.6V 8 16 mS Load Short-Circuiting Detection Delay Time *tSHOR T VDD=3.6V 360 600 uS Note: * -The parameter is gu
16、aranteed by design. Figure 3. Functional Block Diagram XB7608AJ _ _ _ XySemi Inc - 5 - REV0.1 FUNCTIONAL DESCRIPTION The XB7608AJ monitors the voltage and current of a battery and protects it from being damaged due to overcharge voltage, overdischarge voltage, overdischarge current, and short circui
17、t conditions by disconnecting the battery from the load or charger. These functions are required in order to operate the battery cell within specified limits. The device requires only one external capacitor. The MOSFET is integrated and its RSS(ON) is as low as 15.5m typical. Normal operating mode I
18、f no exception condition is detected, charging and discharging can be carried out freely. This condition is called the normal operating mode. Overcharge Condition When the battery voltage becomes higher than the overcharge detection voltage (VCU) during charging under normal condition and the state
19、continues for the overcharge detection delay time (tCU) or longer, the XB7608AJ turns the charging control FET off to stop charging. This condition is called the overcharge condition. The overcharge condition is released in the following two cases: 1, When the battery voltage drops below the overcha
20、rge release voltage (VCL), the XB7608AJ turns the charging control FET on and returns to the normal condition. 2, When a load is connected and discharging starts, the XB7608AJ turns the charging control FET on and returns to the normal condition. The release mechanism is as follows: the discharging
21、current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage increases about 0.7 V (forward voltage of the diode) from the GND pin voltage momentarily. The XB7608AJ detects this voltage and releases the ove
22、rcharge condition. Consequently, in the case that the battery voltage is equal to or lower than the overcharge detection voltage (VCU), the XB7608AJreturns to the normal condition immediately, but in the case the battery voltage is higher than the overcharge detection voltage (VCU),the chip does not
23、 return to the normal condition until the battery voltage drops below the overcharge detection voltage (VCU) even if the load is connected. In addition, if the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the chip does
24、not return to the normal condition. Remark If the battery is charged to a voltage higher than the overcharge detection voltage (VCU) and the battery voltage does not drops below the overcharge detection voltage (VCU) even when a heavy load, which causes an overcurrent, is connected, the overcurrent
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