AP50P03K 35a 30v p沟道增强型mos管丝印AP50P03_骊微电子.pdf

AP50P03K PChannel Power MOSFET General D铺crlptl。nThe A用OP03K combines advanced trenchMO SFET technol句ywith a low resistance package toprovide extremely low RDS(ON).This device is idealfor load switch and batte叩protecti。n appli臼tions.FeaturesAdvan臼high cell density Trench technologyLow RoscoN)to minimize conductive lossLow Gate Charge for恒st switchinglow Thermal resistan四Applicati。nMBNGAVco用SMPS 2nd Synchronous RectifiePOLappli臼tionBLOC Motor driverand Ordarina Information Device AP50P03K Device Package T。252-2LAbs。lute Maximum Ratings(Tc=25】Parame恒rSymbol D阳in-SourceVoltage V os Gate-S。u回Vol国geVr;sContinuous Drain Current(TC=25 lo Pulsed Drain Cuent山loM Reel Size To恒l Power Dissipa四onPoTC=25 To恒l Power Dissipation PoTA=25C Operating Junction Temperature TJ Storage Temperature Tsro Single Pu悔e Avalanche Energy EAS G 剧”。iWERDATA SHEET V DS=-30V RoscoN)=1SmQID=-35A T0-252-2L top view Tape width Quantity Rating Unit-30v 土20v-35A-70A 40 w 0.9 w-55t。150oc-55t。150oc 100 mJ 深圳市骊微电子科技有限公司铨力半导体代理AIIP。WERAP50P03K DATA SHEET P-Channel Power MOSFETThermal resistanceParameter Symb。lMin.Typ.Max.Unit Thermal resistan饵，juncti。n但seRthJC 34。C/WThermal resistance,junction-ambient RthJA 180。C/Ws。Ide时ng temperature,wavesoldering for 1 Os Tsold 265。CElectronic CharacteristicsParameter Symbol c。nditi。nMin.Typ M缸Unit Drain-S。urce Breakdown BVcss VGs=OV,10=-250uA-30v Voltage Gate Thresh。Id Voltage VGS(TH)VGs=V cs,lo=-250uA-1.2-2.5v Dain-Sour1四Leakage Current loss Vos=-30V,V GS=OV-1.0uA Ga恒Source Leakage CuentIGss VGs土12V,Vos=OV 士100nA Static Drain-source On VGs=-10V,lc=-9A 15 20 mn Resistance RoscoN)VGs=-4.SV,lo=-8A 25 32 mn Forward Tansconduc恒nee9FS Vos=-10V,lc=-SA 9 s Electronic CharacteristicsParameter Symbol c。nditi。nMin.Typ M缸Unit Input臼paci恒neeCiss 1650 Output cap邵阳neec。SSf=1MHz 330 pF Reverse transfer capaci恒neeCrss 220 Gate Charge characteristics(T a=25）Parameter Symbol c。1diti。nMin.Typ Max.Unit To恒lgate cha咱eQg VDD=25V 才5 Gate-S。urce charge Qgs ID=8A 4 nC Gate-Drain cha咱eQgd VGS=10V 6 Note：Pulse Test:Pulse widths 300间，Duty cycle s 2%;Device mounted on FR-4 substrate PC board,2oz coppe，with thermal bias to bottomlayer 1 inch square c。pper plate;深圳市骊微电子科技有限公司铨力半导体代理AIIP。WERDATA SHEET AP50P03K P-Channel Power MOSFETFig.2 Typical output Characteristics Fig.1 PoweDissipati。n Derating Curve50 40 c ii 30:I 言20 I!10。1.2 副团军军三0.8l,g0.6 胃百0.4c jo.2 1 0,5 Drain毛。urcevoltage(V)。200 50 100 150 Temperature(C)0 0 Fig.4 Resistance V.S Drain Current Fig.3 Threshold v。ltage V.S Junction Temperature 40 30 20 10。30 20 骂iii!10150 _/V,.,-Junction Temperature 50-500-0.5-1 =1-1.5-2Drain Current(A)-2.5Fig.6 On-Resis恒nee V.S Junction Temperature Fig.5 On-R!臼is国n臼VS Gate Source Voltage 以 J”；i,.o 1 30 nunu 吨，咽AEEzgg 0 3 150 100 50。-509 7 5 Temperature VGs(-V)深圳市骊微电子科技有限公司铨力半导体代理AP50P03K P-Channel Power MOSFETFig.7 Switching Time Measurement Circuit Fig.9 Switching Time Measurement Circuit Vos e一一lo Fig.11 Avalanche Measurement Circuit AIIP。1WERFig.8 Gate Charge Waveform Vo ChageFig.10 Ga恒Charge WavefomVos Voa Pulsewid甘冒Fig.12 Avalanche Waveform DATA SHEET Voo口l二VIIIIQ回丢.L 11182 v,2 V?-Voo 深圳市骊微电子科技有限公司铨力半导体代理AP50P03K PChannel Power MOSFET T0-252 Package Information D Dl 中c 且斗伽。Dimensi。ns In Millimeters Symbol Min,Max.A 2.200 2.400 A1 0.000 0.127 b 0.660 0.860 c 0.460 0.580 D 6.500 6.700 D1 5.100 5.460 D2 4.830TYP.E 6.000 6.200 e 2.186 2.386 L 9.800 10.400 L1 2.900TYP.L2 1.400 1.700 L3 1.600 TYP.L4 0.600 1.000 1.100 1.300 9 o sh 0.000 0.300 v 5.350TYP.AIIP。WERDATA SHEET A Dimensi。nslnlnchesMin,Max.0.087 0.094 0.000 0.005 0.026 0.034 0.018 0.023 0.256 0.264 0.201 0.215 0.190TYP.0.236 0.244 0.086 0.094 0.386 0.409 0.114 TYP.0.055 0.067 0.063TYP.0.024 0.039 0.043 0.051 0。s0.000 0.012 0.21才TYP.深圳市骊微电子科技有限公司铨力半导体代理