场效应管10N65L-ML 10A 650V-10n65技术参数_骊微电子.pdf

UNISONIC TECHNOLOGIES CO.,LTD 10N65-ML Power MOSFET 10A,650V N-CHANNEL POWER MOSFET DESCRIPTIONThe UTC 10N65-ML is a high voltage power MOSFETcombines advanced trench MOSFET designed to have better characteristics,such as fast switching time,low gate charge,low on-state resistance and high rugged avalanche characteristics.This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.FEATURES*RDS(ON)1.0 VGS=10V,ID=5.0A*Fast switching capability*Avalanche energy tested*Improved dv/dt capability,high ruggednessSYMBOL深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETORDERING INFORMATIONOrdering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 10N65L-TA3-T10N65G-TA3-T TO-220 G D S Tube10N65L-TF1-T10N65G-TF1-T TO-220F1 G D S Tube10N65L-TF2-T10N65G-TF2-T TO-220F2 G D S Tube10N65L-TF3-T10N65G-TF3-T TO-220F G D S Tube10N65L-TM3-T10N65G-TM3-T TO-251 G D S Tube10N65L-TN3-R10N65G-TN3-R TO-252 G D S Tape Reel10N65L-T2Q-T10N65G-T2Q-T TO-262 G D S Tube10N65L-T2Q-R10N65G-T2Q-R TO-262 G D S Tape Reel10N65L-TQ2-T10N65G-TQ2-T TO-263 G D S Tube10N65L-TQ2-R10N65G-TQ2-R TO-263 G D S Tape ReelNote:Pin Assignment:G:Gate D:Drain S:Source MARKING深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETABSOLUTE MAXIMUM RATINGS(TC=25C,unless otherwise specified)PARAMETERSYMBOL RATINGS UNITDrain-Source Voltage VDSS650VGate-Source Voltage VGSS30VContinuous Drain Current ID10APulsed Drain Current(Note 2)IDM20AAvalanche Energy Single Pulsed(Note 3)EAS800mJPeak Diode Recovery dv/dt(Note 4)dv/dt 2.1 V/ns Power Dissipation TO-220/TO-262 TO-263 PD 135WTO-220F/TO-220F1 TO-220F2 38WTO-251/TO-25255 WJunction Temperature TJ+150CStorage Temperature TSTG-55 +150C Notes:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.2.Repetitive Rating:Pulse width limited by maximum junction temperature.3.L=100mH,IAS=4.1A,VDD=50V,RG=25,Starting TJ=25C4.ISD 10A,di/dt 200A/s,VDD BVDSS,Starting TJ=25CTHERMAL DATAPARAMETERSYMBOL RATINGS UNITJunction to Ambient TO-220/TO-220F TO-220F1/TO-220F2 TO-262/TO-263 JA 62.5C/WTO-252110 C/WJunction to Case TO-220/TO-262 TO-263 JC 0.92C/WTO-220F/TO-220F1 TO-220F2 3.29C/WTO-251/TO-2522.27(Note)C/WNote:Device mounted on FR-4 substrate PC board,2oz copper,with 1inch square copper plate.深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETELECTRICAL CHARACTERISTICS(TJ=25C,unless otherwise specified)PARAMETERSYMBOLTEST CONDITIONS MIN TYP MAXUNITOFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250A650 VDrain-Source Leakage Current IDSS VDS=650V,VGS=0V 10AGate-Source Leakage Current Forward IGSS VGS=30V,VDS=0V 100nAReverseVGS=-30V,VDS=0V-100nAON CHARACTERISTICS Gate Threshold Voltage VGS(TH)VDS=VGS,ID=250A 2.04.0V Static Drain-Source On-State Resistance RDS(ON)VGS=10V,ID=5.0A 1.0 DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz 1300pFOutput Capacitance COSS 124pFReverse Transfer Capacitance CRSS 9.3pFSWITCHING CHARACTERISTICS Total Gate Charge(Note 1)QG VDS=520V,VGS=10V,ID=10A IG=1mA(Note 1,2)31 nCGate-Source Charge QGS 7.6nCGate-Drain Charge QGD 5.8nCTurn-On Delay Time(Note 1)tD(ON)VDS=100V,VGS=10V,ID=10A,RG=25(Note 1,2)20 nsTurn-On Rise Time tR 21nsTurn-Off Delay Time tD(OFF)98nsTurn-Off Fall Time tF35nsDRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Body-Diode Continuous Current IS 10A Maximum Body-Diode Pulsed Current ISM20A Drain-Source Diode Forward Voltage(Note 1)VSD IS=10A,VGS=0V 1.4VReverse Recovery Time(Note 1)trr IS=10A,VGS=0V di/dt=100A/s 376nsReverse Recovery Charge Qrr 8.5CNotes:1.Pulse Test:Pulse width 300s,Duty cycle 2%.2.Essentially independent of operating temperature.深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETTEST CIRCUITS AND WAVEFORMSSame Type as D.U.T.LVDDDriverVGSRG-VDSD.U.T.+*dv/dt controlled by RG*ISD controlled by pulse period*D.U.T.-Device Under Test-+ISDPeak Diode Recovery dv/dt Test Circuit P.W.PeriodD=VGS(Driver)ISD(D.U.T.)IFM,Body Diode Forward Currentdi/dtIRMBody Diode Reverse CurrentBody Diode Recovery dv/dtBody Diode Forward Voltage DropVDD10VVDS(D.U.T.)VGS=P.W.PeriodPeak Diode Recovery dv/dt Waveforms 深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETTEST CIRCUITS AND WAVEFORMSVDS90%10%VGStD(ON)tRtD(OFF)tFSwitching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms 深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETTYPICAL CHARACTERISTICS深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETTYPICAL CHARACTERISTICS(Cont.)深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司10N65-ML Power MOSFETTYPICAL CHARACTERISTICS(Cont.)UTC assumes no responsibility for equipment failures that result from using products at values that exceed,even momentarily,rated values(such as maximum ratings,operating condition ranges,or other parameters)listed in products specifications of any and all UTC products described or contained herein.UTC products are not designed for use in life support appliances,devices or systems where malfunction of these products can be reasonably expected to result in personal injury.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.UTC reserves the right to make changes to information published in this document,including without limitation specifications and product descriptions,at any time and without notice.This document supersedes and replaces all information supplied prior to the publication hereof.深圳市骊微电子科技有限公司UTC供应商半导体专业供应商深圳市骊微电子科技有限公司