半导体工艺PhotoPPT课件.ppt
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1、IC工艺技术系列讲座第二讲PHOTOLITHOGRAPHY光刻1 1.讲座提要1.General 2.Facility(动力环境)3.Mask(掩膜版)4.Process step highlight(光刻工艺概述)5.BCD 正胶工艺6.History and 未来的光刻工艺2 2.1.GeneralMASKING Process(光刻工艺)n nPhotolithography Photolithography(光学光刻光学光刻)-Transfer a -Transfer a temporary pattern(resist)temporary pattern(resist)Defect
2、controlDefect controlCritical dimension controlCritical dimension controlAlignment accuracyAlignment accuracyCross section profileCross section profile n nEtch Etch(腐腐蚀蚀)-Transfer a permanent pattern -Transfer a permanent pattern(Oxide,Nitride,Metal(Oxide,Nitride,Metal)3 3.2.0 Facility requirementn
3、nTemperature (Temperature (温度温度)70 70 o oF Fn nHumidity(Humidity(湿度湿度)45%45%n nPositive pressure(Positive pressure(正正压压)0.02in/H0.02in/H2 2OOn nParticle control(Particle control(微粒微粒)Class 100Class 100n nVibration(Vibration(震震动动)n nYellow light environment(Yellow light environment(黄光区黄光区)n nDI water
4、(DI water(去离子水去离子水)17mhom)17mhomn nCompress air and Nitrogen(Compress air and Nitrogen(加加压压空气空气,氮氮气气)n nIn house vacuum(In house vacuum(真空管道真空管道)4 4.3.0 Mask(掩膜版)n nDesign n nPG tapen nMask making Plate-quartz,LE glass,Soda line glassPlate-quartz,LE glass,Soda line glass Coating-Chrome,Ion oxide,Emu
5、lsionCoating-Chrome,Ion oxide,Emulsion Equipment-E-beam,Pattern generatorEquipment-E-beam,Pattern generatorn nMask storage-Anti static BoxAnti static Box5 5.Pellicle6 6.Pellicle protection7 7.4.0 光刻工艺概述1.1.Prebake and HMDS (前烘前烘)2.2.Resist coating(涂胶涂胶)EBR(EBR(去胶去胶边边),soft bake,),soft bake,3.Exposur
6、e(曝光曝光)Alignment(Alignment(校正校正)4.Develop(显显影影)Post e-bake,Hard bake,backside rinse Post e-bake,Hard bake,backside rinse 5.Develop inspection(显检显检)8 8.4.1 Prebake and HMDS treatmentPurpose of Pre-bake and HMDS treatment is to improve the Purpose of Pre-bake and HMDS treatment is to improve the resis
7、t adhesion on oxide wafer.HMDS is adhesion promoter resist adhesion on oxide wafer.HMDS is adhesion promoter especially designed for positive resist.especially designed for positive resist.HMDS(Hexamethyldisilane)can be applied on the wafers byHMDS(Hexamethyldisilane)can be applied on the wafers by1
8、.1.Vapor in a bucketVapor in a bucket2.2.vapor in a vacuum boxvapor in a vacuum box3.3.Directly dispense on waferDirectly dispense on wafer4.4.YES system-in a hot vacuum systemYES system-in a hot vacuum system5.5.Vapor in a hot plate(with exhaust)Vapor in a hot plate(with exhaust)Too much HMDS will
9、cause poor spin,vice versa will cause Too much HMDS will cause poor spin,vice versa will cause resist liftingresist lifting9 9.4.2 Resist Coating(涂胶)Resist coating specification(Resist coating specification(指指标标)n nThicknessThickness(厚度)(厚度)0.7u 0.7u 2.0u (3.0 2.0u (3.0以上以上for Pad layer)for Pad laye
10、r)n nUniformityUniformity(均匀度)(均匀度)+50A 50A +200A200An nSize of EBR Size of EBR(去胶(去胶边边尺寸)尺寸)n nParticleParticle(颗颗粒)粒)20 per wafer20 per wafern nBackside contamination(Backside contamination(背后背后污污染)染)三个主要因数影响涂胶的三个主要因数影响涂胶的结结果果1.1.ResistResistProduct(Product(产产品)品)Viscosity Viscosity(粘度)(粘度)2.2.Spi
11、nnerSpinnerDispense method Dispense method(涂胶方法)(涂胶方法)Spinner speed(RPM)Spinner speed(RPM)(转转速)速)Exhaust Exhaust(排气)(排气)Soft bake temperature Soft bake temperature(烘温)(烘温)3.3.FacilityFacilityTemperature Temperature(室温)(室温)Humility Humility(湿度)(湿度)1010.4.2.1Coater(涂胶机)Equipment module and special fea
12、turen nPre-bake and HMDS-Hot/Cold platePre-bake and HMDS-Hot/Cold platen nResist dispense-Resist pumpResist dispense-Resist pumpn nRPM accuracy-MotorRPM accuracy-Motorn nEBR-Top/bottomEBR-Top/bottomn nHot plate-soft bake temperature accuracyHot plate-soft bake temperature accuracyn nExhaustExhaustn
13、nWaste collectionWaste collectionn nTemperature/Humidity control hoodTemperature/Humidity control hoodn nTransfer system-Particle and reliabilityTransfer system-Particle and reliabilityn nProcess step and process program-FlexibleProcess step and process program-Flexible1111.SVG 8800升降机涂胶HMDS热板冷板升降机升
14、降机升降机涂胶热板热板升降机升降机升降机升降机涂胶热板冷板HMDS冷板冷板冷板涂胶热板热板升降机升降机显影热板热板热板冷板4.2.2 Coater(涂胶机)combination1212.4.2.3 Coater(涂胶机)Resist dispense methodsn nStatic Static n nDynamicDynamicn nRadialRadialn nReverse radialReverse radialResist pump(Volume control-2cc/wafer and dripping)(Volume control-2cc/wafer and drippi
15、ng)n nBarrel pump-TritekBarrel pump-Tritekn nDiaphragm pump-MilliporeDiaphragm pump-Milliporen nN2 pressure control pump-IDLN2 pressure control pump-IDLn nStep motor control pump-Cybot Step motor control pump-Cybot n nsize of dispense head size of dispense head 1313.4.2.4 Coater(涂胶机)rpm(转速)and accel
16、eration(加速)n nMaximum speed-Up to 10000 rpmMaximum speed-Up to 10000 rpmn nStability-day to dayStability-day to dayn nAcceleration-controllable number of Acceleration-controllable number of stepsstepsn nReliability-time to replacementReliability-time to replacementEBR(Edge bead removal)(清边)n nMethod
17、-Top EBR or Bottom EBR or Method-Top EBR or Bottom EBR or Top and bottom EBRTop and bottom EBRn nProblem-DrippingProblem-Drippingn nChemical-Acetone,EGMEA,PGMEA,Chemical-Acetone,EGMEA,PGMEA,ETHLY-LACTATEETHLY-LACTATE1414.Resist Typen nNegative resistNegative resistn nPositive resistPositive resistG-
18、lineG-linei i linelinereverse imagereverse imageTAC-top anti-reflective coatingTAC-top anti-reflective coatingBARLI-bottom anti-reflective coatingBARLI-bottom anti-reflective coatingn nChemical amplification resistChemical amplification resistn nX ray resistX ray resist1515.4.3.1 Exposure(曝光)Transfe
19、r a pattern from the mask(reticle)to resistTransfer a pattern from the mask(reticle)to resistGoalGoal1.1.Critical Dimension control(CD)Critical Dimension control(CD)条条宽宽2.2.Alignment Alignment 校准校准-Mis-alignment,run in/out-Mis-alignment,run in/out3.3.Pattern distortion Pattern distortion 图样变图样变形形-As
20、tigmatism-Astigmatism4.4.Cross section profile Cross section profile 侧侧面形貌面形貌-side wall angle-side wall angle5.5.Defect freeDefect free无缺陷无缺陷Equipment/mask/resist selectionEquipment/mask/resist selection1.1.Resolution Resolution 分辨率分辨率-Expose character,Light source-Expose character,Light source(wave
21、length),N/A,(wavelength),N/A,2.2.Auto-alignment skill Auto-alignment skill 自自动动校准技校准技术术-Light field,dark field,-Light field,dark field,laserlaser3.3.MaskMask掩膜版掩膜版-e-beam master,sub-master,spot size,-e-beam master,sub-master,spot size,quartz plate,defect density,CD requirementquartz plate,defect den
22、sity,CD requirement4.4.Resist selection Resist selection 胶胶选择选择1616.4.3.2Exposure(曝光)Aligner Technology1.1.Contact print(Contact print(接触)接触)Soft contact,hard contact,proximitySoft contact,hard contact,proximity2.2.Scanner(Scanner(扫扫描)描)3.3.Stepper(Stepper(重复)重复)1X,2X,4X,5X,10X1X,2X,4X,5X,10X4.4.Ste
23、p Step Scan(Scan(重复重复扫扫描描)4X-reticle move,wafer move,4X-reticle move,wafer move,reticle/wafer movereticle/wafer move5.5.X ray(XX ray(X光)光)1:16.6.E-beam(E-beam(电电子束)子束)-Direct write-Direct write 1717.4.3.3Exposure(曝光)Contact print(接触)1.1.Most of use for negative resist process Most of use for negativ
24、e resist process-for 5u process and can be push to-for 5u process and can be push to 3u.3u.2.2.Positive resist can print smaller than Positive resist can print smaller than 3u,and deepUV can push to 1u,but 3u,and deepUV can push to 1u,but very high defectvery high defect3.3.Equipment:Equipment:-Cano
25、n PLA 501-Canon PLA 501-Cobilt-Cobilt-Kasper-Kasper-K&S-K&S1818.Contact print-Canon 5011919.4.3.4Exposure(曝光)Scanner(扫描)1.Most of use for G line Positive resist process-for 3u process and can be push to 2u.2.Negative resist can print smaller than 4u 3.Equipment:-Canon MPA 500,600-Perkin Elmer 100,20
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