mos PTS4842 30V7.7A双n沟道mos管-4842双mos管规格书_骊微电子.pdf

(TPTS4PTS4 SymbolParameterRating UnitC=25C Unless Otherwise Noted)GSVGate-Source Voltage 20 V(BR)DSSVDrain-Source Breakdown Voltage 30 V JTMaximum Junction Temperature 150 C STGTStorage Temperature Range-50 to 150C SIDiode Continuous Forward CurrentCT=25C 5 A Mounted on Large Heat Sink DMIPulse Drain Current TestedCT=25C 30 A DIContinuous Drain Current(VGS=10V)CT=25C 7.7 A CT=100C 6.5 DPMaximum Power Dissipation CT=25C 2W JARThermal Resistance Junction-Ambient 89 C/W Features BVDSS30V,RDS(ON)=21m(Typ)VGS=10V Low On-Resistance Fast Switching Lead-Free,Hg-Free,Green Product PTS4842 designed by the trench processing techniques to achieve extremely low on-resistance.And fast switching speed and improved transfer effective.These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.Pin Description Absolute Maximum RatingsPTS4842(Note 1)30V/7.7A Dual N-Channel Advanced Power MOSFET深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics TJ=25C(unless otherwise stated)(BR)DSSVDrain-Source Breakdown Voltage VGS=0V ID=250A 30-V DSSIZero Gate Voltage Drain Current VDS=30V,VGS=0V-1 A GSSIGate-Body Leakage Current VGS=20V,VDS=0V-100 nA GS(TH)VGate Threshold Voltage VDS=VGS,ID=250A 1.0 1.6 2.5 V DS(ON)RDrain-Source On-State Resistance VGS=10V,ID=7.7A-16 21 m DS(ON)RDrain-Source On-State Resistance VGS=5V,ID=5A-20 30 m Dynamic Electrical Characteristics TJ=25C(unless otherwise stated)issCInput Capacitance VDS=15V,VGS=0V,f=1MHz-420-pF ossCOutput Capacitance-85-pF rssCReverse Transfer Capacitance-9-pF gQTotal Gate Charge VDS=15V,ID=4A,VGS=4.5V-10.5-nC gsQGateSource Charge-2.3-nC gdQGateDrain Charge-3-nC Switching Characteristics d(on)tTurnon Delay Time VDD=15V,ID=3A,RG=3.3,VGS=10V-4.5-ns rtTurnon Rise Time-3-ns d(off)tTurnOff Delay Time-12-ns ftTurnOff Fall Time-2-ns Source Drain Diode Characteristics SDISourcedrain current(Body Diode)Tc=25.-5 A SDVForward on voltage Tj=25,ISD=4A,VGS=0V-0.82 1.2 V Notes:Pulse test;Pulse width300s,duty cycle2%.Pulse width limited by maximum allowable junction temperaturePTS484230V/7.7A Dual N-Channel Advanced Power MOSFET深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司Typical Characteristics2014-5-23 3-VDS,Drain-Source Voltage(V)Fig1.Typical Output Characteristics Tj,Junction Temperature(C)Fig2.Power Dissipation VGS,Gate-Source Voltage(V)Fig3.Typical Transfer Characteristics Tj,Junction Temperature(C)Fig4.Normalized On-Resistance Vs.Temperature VDS,Drain-Source Voltage(V)Fig5.Maximum Safe Operating Area Square Wave Pulse Duration(sec)Fig6.Thermal Transient ImpedanceID,Drain-Source Current(A)Normalized On Resistance ID,Drain Current(A)ID,Drain Current(A)ID,Drain-Source Current(A)Ptot-Power（W）PTS484230V/7.7A Dual N-Channel Advanced Power MOSFET深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司 Typical Characteristics VSD,Source-Drain Voltage(V)Fig7.Typical Source-Drain Diode Forward Voltage Qg,Total Gate Charge(nC)Fig8.Typical Gate Charge Vs.Gate-Source Voltage Tj,Junction Temperature(C)Fig9.Threshold Voltage Vs.Temperature VDS,Drain-Source Voltage(V)Fig10.Typical Capacitance Vs.Drain-Source Voltage VGS,Gate-Source Voltage(V)ISD,Reverse Drain Current(A)Normalized VGS(TH),Gate-Source Voltage C,Capacitance(pF)Fig11.Switching Time Test Circuit and waveforms PTS484230V/7.7A Dual N-Channel Advanced Power MOSFET深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商深圳市骊微电子科技有限公司