1、V:TO-251-3LVHY1908D/U/V N-Channel Enhancement Mode MOSFETOrdering and Marking InformationApplicationsPower Management for Inverter Systems.Features 80V/90A,AvalancheRated Reliableand Rugged Lead FreeandGreenDevicesAvailable(RoHSCompliant)7.8RDS(ON)=m(typ.)VGS=10VPin DescriptionUDU:TO-251-3LD:TO-252-
2、2L Date CodePackage CodeHY1908HY1908HY1908 HUAYIHUAYI defines ation finish;which are fully compliant with RoHS.HUAYI leadNote:HUAYI lead-free products contain molding compounds/die attach materials and 100%matte tin plate Termin-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-
3、STD-020 for MSL classification at lead-free peak reflow temperature.“Green”to mean lead-free(RoHS compliant)and halogen free(Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).reserves the right to make changes,corrections,enha
4、ncements,modifications,and improvements tothis pr-oduct and/or to this document at any time without notice.TO-251-3STO-252-2LTO-251-3LSGDSGDSGDSGDN-ChannelMOSFETXYMXXXXXXXYMXXXXXXXYMXXXXXXXYMXXXXXX深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商HY1908D/U/VA,V80214*315*80HY1908Absolute Maximum RatingsSymbolParameterRat
5、ing UnitCommon Ratings(TC=25C Unless Otherwise Noted)VDSS Drain-Source Voltage VGSS Gate-Source Voltage 25 V TJ Maximum Junction Temperature175CTSTG Storage Temperature Range-55 to 175C IS Diode Continuous Forward Current TC=25C90AMounted on Large Heat Sink IDMTC=25CATC=25C90ID Continuous Drain Curr
6、ent TC=100C59A TC=25C64PD Maximum Power Dissipation TC=100C32W RJC Thermal Resistance-Junction to Case 2.35 RJA Thermal Resistance-Junction to Ambient 110 C/W Avalanche Ratings EAS Avalanche Energy,Single Pulsed L=0.5mH mJ Electrical Characteristics (TC=25C Unless Otherwise Noted)SymbolParameterTest
7、 ConditionsMin.Typ.Max.Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS=250A -V VDS=80V,VGS=0V-1IDSS Zero Gate Voltage Drain Current TJ=85C-10 A VGS(th)Gate Threshold Voltage VDS=VGS,IDS=250A 2 3 4 V IGSS Gate Leakage Current VGS=25V,VDS=0V-100 nARDS(ON)Drain-Source On-sta
8、te Resistance VGS=10V,IDS=45A-7.8 9.0 m Diode Characteristics VSDDiode Forward Voltage ISD=45GS=0V-0.8 1.2 Vtrr Reverse Recovery Time-30-ns Qrr Reverse Recovery Charge ISD=45A,dlSD/dt=100A/s-25-nC*Drain current is limited by junction temperaturePulsed Drain Current*Note:*VD=64V*Repetitive rating;pul
9、se width limiited by junction temperature*深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商HY1908D/U/V386423942Electrical Characteristics(Cont.)(TC=25C Unless Otherwise Noted)SymbolParameterTest ConditionsMin.Typ.Max.Unit Dynamic CharacteristicsRG Gate Resistance VGS=0V,VDS=0V,F=1MHz-1.2-Ciss Input Capacitance-Coss Out
10、put Capacitance-365-Crss Reverse Transfer Capacitance VGS=0V,VDS=25V,Frequency=1.0MHz-pF td(ON)Turn-on Delay Time-26 Tr Turn-on Rise Time-td(OFF)Turn-off Delay Time-64 Tf Turn-off Fall Time -20 ns Gate Charge CharacteristicsQg Total Gate Charge-84 Qgs Gate-Source Charge-16-Qgd Gate-Drain Charge VDS=
11、64V,VGS=10V,IDS=45A-26-nC VDD=40V,RG=6,IDS=45A,VGS=10V,Note*:Pulse test;pulse width300s,duty cycle2%.-HY1908-深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商HY1908D/U/VAvalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit 深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商HY1908D/U/VPackage InformationTO-252-2LCOMMON
12、DIMENSIONSSYMBOL mm MIN NOM MAX A 2.202.302.40A1 0.00-0.20A2 0.971.071.17b 0.680.780.90b3 5.205.335.50c 0.430.530.63D 5.986.106.22D15.30REFE 6.406.606.80E1 4.63-e2.286BSCH 9.4010.1010.50L 1.381.501.75L12.90REFL20.51BSCL3 0.88-1.28L4-1.00L5 1.651.801.95 0-8 Device Per Unit Package Type Unit Quantity
13、TO-252-2L Tube 75 TO-252-2L Reel 2500 TO-251-3L Tube 75 TO-251-3S Tube 75 深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商HY1908D/U/V TO-251-3LCOMMON DIMENSIONSSYMBOL mm MIN NOM MAX A2.202.302.40A20.971.071.17b0.680.780.90b20.000.040.10b20.000.040.10b35.205.335.50c0.430.530.63D5.986.106.22D15.30REFE6.406.606.80E14.63-e2.286BSCH16.2216.5216.82L19.159.409.65L30.881.021.28L51.651.801.95深圳市骊微电子科技有限公司电源方案开发设计半导体专业供应商